A BGK type approximation for the collision operator of the transport equation for semiconductors
Keywords:
Boltzmann equation, Chapman-Enskog expansion, drift-diffusion equationAbstract
In the attempt of obtaining macroscopic models which describe the flow of electrons through a semiconductor crystal, many authors start from the Boltzmann transport equation, often using a generalized BGK type approximation for the collision operator. In this work, by means of this approximation, we shall show that it is possible to obtain a new drift-diffusion equation valid in the high electric field regime.Downloads
Published
Issue
Section
License
The authors retain all rights to the original work without any restrictions.
License for Published Contents
"Le Matematiche" published articlesa are distribuited with Creative Commons Attribution 4.0 International. You are free to copy, distribute and transmit the work, and to adapt the work. You must attribute the work in the manner specified by the author or licensor (but not in any way that suggests that they endorse you or your use of the work).
License for Metadata
"Le Matematiche" published articles metadata are dedicated to the public domain by waiving all publisher's rights to the work worldwide under copyright law, including all related and neighboring rights, to the extent allowed by law.
You can copy, modify, distribute and perform the work, even for commercial purposes, all without asking permission.
No Fee Charging
No fee is required to complete the submission/review/publishing process of authors paper.