Enhancement of high-energy distribution tail in Monte Carlo semiconductor simulations using a Variance Reduction Scheme
AbstractThe Multicomb variance reduction technique has been introduced in the Direct Monte Carlo Simulation for submicrometric semiconductor devices. The method has been implemented in bulk silicon. The simulations show that the statistical variance of hot electrons is reduced with some computational cost. The method is efficient and easy to implement in existing device simulators.
The authors retain all rights to the original work without any restrictions.
License for Published Contents
"Le Matematiche" published articlesa are distribuited with Creative Commons Attribution 4.0 International. You are free to copy, distribute and transmit the work, and to adapt the work. You must attribute the work in the manner specified by the author or licensor (but not in any way that suggests that they endorse you or your use of the work).
License for Metadata
"Le Matematiche" published articles metadata are dedicated to the public domain by waiving all publisher's rights to the work worldwide under copyright law, including all related and neighboring rights, to the extent allowed by law.
You can copy, modify, distribute and perform the work, even for commercial purposes, all without asking permission.
No Fee Charging
No fee is required to complete the submission/review/publishing process of authors paper.